| 摘要 |
A method for forming a barrier layer of a semiconductor device is disclosed, to improve the advantageous characteristics of device by obtaining the uniformity on depositing a barrier layer eve in case an etching profile is not in shape of the vertical, which includes the steps of loading a wafer having a line pattern layer for a metal line on a wafer stage of a deposition equipment; forming a diffusion barrier layer on the line pattern layer in state of rotating the wafer stage; and forming a seed metal layer, wherein the seed metal layer serves as a seed when forming a main line layer on the diffusion barrier layer.
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