| 摘要 |
The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can contain a homogeneous distribution of cerium oxide and titanium oxide, and/or can contain a laminate of cerium oxide and titanium oxide. The dielectric materials can be incorporated into any suitable semiconductor devices, including, for example, capacitor devices, transistor devices, and flash memory devices. The invention also includes methods of utilizing atomic layer deposition to form laminates of cerium oxide and titanium oxide.
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