Producing openings in semiconducting wafers and layers with plasma etching and electrostatic wafer holder involves applying metal coating to rear of wafer before etching to prevent etching of wafer holder

摘要

The method involves plasma etching while fixing the wafer (1) with an electrostatic wafer holder (5). A metal coating (4) is applied to the rear of the wafer, i.e. on the side opposite the etching mask for plasma etching, before the plasma chemical etching to prevent etching of the wafer holder and forms metal membranes near the openings (3) of the semiconducting layer.