发明名称 |
Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby |
摘要 |
Provided are a method of fabricating an improved multi-gate transistor and a multi-gate transistor fabricated using the method, which can reproduce a profile of a gate electrode in a stable manner. The method includes forming an active pattern on a substrate, the active pattern having two or more surfaces on which channel regions are to be formed, forming a gate insulating layer on the channel regions, and forming a patterned gate electrode on the gate insulating layer while maintaining a shape conformal to the active pattern.
|
申请公布号 |
US2005285161(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20050103115 |
申请日期 |
2005.04.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG TAE-WOONG;AHN JONG-HYON |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|