发明名称 |
Method of forming high voltage devices with retrograde well |
摘要 |
A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate region, wherein the retrograde well reduces a dopant concentration on the surface of the substrate, thereby minimizing damages to the gate region.
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申请公布号 |
US2005285218(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20040877450 |
申请日期 |
2004.06.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU KUO-MING;WU CHEN-BAU;LIU RUEY-HSIN;HSU SHUN-LIANG |
分类号 |
H01L29/00;H01L29/08;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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