发明名称 Memory array having a layer with electrical conductivity anisotropy
摘要 A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.
申请公布号 US2005285169(A1) 申请公布日期 2005.12.29
申请号 US20040879670 申请日期 2004.06.29
申请人 SEAGATE TECHNOLOGY LLC 发明人 AHNER JOACHIM W.;YU JUN;WELLER DIETER K.
分类号 G11B9/02;G11B9/04;H01L29/76;(IPC1-7):H01L29/76 主分类号 G11B9/02
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