| 摘要 |
A pressure sensor includes a metal stem having a diaphragm, and a semiconductor substrate in which an insulation layer is inserted between first and second semiconductor layers. A plurality of strain gauges are formed on a predetermined area of the first semiconductor layer of the semiconductor substrate, for converting a bending of the diaphragm to an electrical signal. In the pressure sensor, the strain gauges have pattern shapes insulated and separated from each other by trenches extending from a surface of the first semiconductor layer to the insulation layer. Furthermore, the second semiconductor layer has a recess portion, which is recessed from a surface of the second semiconductor layer to the insulation layer and is provided at a position corresponding to the predetermined area. The diaphragm is inserted into the recess portion, and the insulation layer is attached to a surface of the diaphragm in the recess portion.
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