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发明名称
Gate circuitry utilizing mos type field effect transistors
摘要
申请公布号
US3313958(A)
申请公布日期
1967.04.11
申请号
US19650484951
申请日期
1965.09.03
申请人
GENERAL DYNAMICS CORPORATION
发明人
JR. JOHN O. BOWERS,
分类号
H03K17/16
主分类号
H03K17/16
代理机构
代理人
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地址
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