发明名称 |
INSULATED POWER SEMICONDUCTOR MODULE WITH REDUCED PARTIAL DISCHARGE AND MANUFACTURING METHOD |
摘要 |
<p>A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method comprises the steps of bonding an insulating substrate (2) onto a bottom plate (11); disposing a first conductive layer (4) on a portion of said insulating substrate (2), so that at least one peripheral top region of said insulating substrate (2) remains uncovered by the first conductive layer (4); bonding a semiconductor chip (6) onto said first conductive layer (4); disposing a precursor (51) of a first insulating material (5) in a first corner (24) formed by said first conductive layer (4) and said peripheral region of said insulating substrate (2); polymerizing the precursor (51) of the first insulating material (5) to form the first insulating material (5); and covering said semiconductor chip (6), said substrate (2), said first conductive layer (4), and said first insulating material (5) at least partially with a second insulating material. According to the invention, the precursor (51) of the first insulating material is a low viscosity monomer or oligomer, which forms a polyimide when polymerizing. Also disclosed is a semiconductor module with reduced partial discharge behavior.</p> |
申请公布号 |
EP1609182(A1) |
申请公布日期 |
2005.12.28 |
申请号 |
EP20040724964 |
申请日期 |
2004.04.01 |
申请人 |
ABB RESEARCH LTD. |
发明人 |
HAMIDI, AMINA;KNAPP, WOLFGANG;MEYSENC, LUC;KESER, HELMUT |
分类号 |
H01L23/24;H01L23/31;H01L23/373;H01L23/498;(IPC1-7):H01L23/24 |
主分类号 |
H01L23/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|