发明名称 PROCESS FOR PRODUCING A HEAT RESISTANT RELIEF STRUCTURE
摘要 <p>A process for producing a heat resistant relief structure on a substrate, the process comprising the steps of: (a) providing a substrate; (b) in a first coating step, coating the substrate with a composition comprising a polyamic acid and gamma-butyrolactone to form a layer of polyamic acid having a thickness of at least about 0.5 mum; (c) baking the layer of polyamic acid at a temperature or temperatures below 140° C.; (d) in a second coating step, coating a layer of a photoresist over the layer of polyamic acid to form a bilayer coating; (e) exposing the bilayer coating to radiation <250 nm (f) developing the bilayer coating with one or more aqueous tetramethyl ammonium hydroxide developers; (g) removing the remaining photoresist layer; and (h) curing the polyamic acid layer at a temperature at least about 200° C. to produce a polyimide structure wherein the polyamic acid is soluble in aqueous tetramethyl ammonium hydroxide and insoluble in a solvent used with the photoresist.</p>
申请公布号 EP1609026(A2) 申请公布日期 2005.12.28
申请号 EP20030799889 申请日期 2003.12.11
申请人 FUJIFILM ELECTRONIC MATERIALS USA, INC. 发明人 NAIINI, AHMAD, A.;RUSHKIN, II'YA;HOPLA, RICHARD;WATERSON, PAMELA, J.;WEBER, WILLIAM, D.
分类号 B32B27/00;G03F;G03F7/00;G03F7/037;G03F7/09;G03F7/095;G03F7/11;G03F7/30;G03F7/38;G03F7/40;(IPC1-7):G03F7/095 主分类号 B32B27/00
代理机构 代理人
主权项
地址