发明名称 |
Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same |
摘要 |
<p>The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a polyhydric alcohol. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.</p> |
申请公布号 |
EP1610184(A1) |
申请公布日期 |
2005.12.28 |
申请号 |
EP20040025761 |
申请日期 |
2004.10.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
NOZAKI, KOJI;NAMIKI, TAKAHISA;KOZAWA, MIWA |
分类号 |
G03F7/00;G03C1/492;G03F7/26;G03F7/40;G11B5/31;H01L21/027;H01L21/033;H01L21/311;H01L21/3213;(IPC1-7):G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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