Semiconductor manufacturing apparatus and pattern formation method

摘要

In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.