发明名称 |
ADDRESSING OF MEMORY MATRIX |
摘要 |
In a method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array, a potential on select ed word and bit lines is controlled to approach or coincide with one of n predefined potential levels and the potentials on all word and bit lines are controlled in time according to a protocol such that word lines are sequentially latched to potentials selected among nword potentials, while th e bit lines are either latched sequentially to potentials selected among nbit potentials, or during a certain period of a timing sequence given by the protocol connected to circuitry for detecting charges flowing between a bit line or bit lines and cells connecting thereto. This timing sequence is provided with a read cycle during which charges flowing between the selected bit line or bit lines connecting thereto are detected and a "refresh/write cycle" during which the polarization of the cells connecting with selected word and bit lines are brought to correspond with a set of predetermined values.
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申请公布号 |
CA2412169(C) |
申请公布日期 |
2005.12.27 |
申请号 |
CA20012412169 |
申请日期 |
2001.07.06 |
申请人 |
THIN FILM ELECTRONICS ASA |
发明人 |
CARLSSON, JOHAN;THOMPSON, MICHAEL;GUDESEN, HANS GUDE;NORDAL, PER-ERIK;GUSTAFSSON, GORAN |
分类号 |
G02F1/133;G09G3/20;G09G3/36;G11C7/06;G11C7/10;G11C8/18;G11C11/22;(IPC1-7):G11C11/22;G11C7/00;G11C8/00 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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