| 摘要 |
There are provided an exposure method and a mask capable of suppressing irregularities of resist pattern dimensions caused by membrane deflection, a semiconductor device having a fine pattern formed with a high accuracy and its manufacturing method. The exposure method arranges an exposure object at one side of the mask and applies an exposure beam to the exposure object via the mask from the other side of the mask. The exposure method includes a step for obtaining a deflection amount distribution of the mask held and a step for changing the exposure amount, the exposure beam focal distance or mask pattern dimension according to the deflection amount and applying an exposure beam with an exposure amount, focal distance, or mask pattern dimension for correcting the fluctuation of the dimension according to the deflection amount of the pattern transferred to the exposure object. The mask used for the method, the semiconductor device manufacturing method including the exposure method, and the semiconductor device manufactured by the manufacturing method are also disclosed. |
