Light-emitting semiconductor device and method of fabrication

摘要

A low-resistance silicon baseplate ( 11 ) has formed thereon a buffer layer 12 in the form of an alternating lamination of AlN sublayers ( 12 a) and GaN sublayers ( 12 b). On this buffer layer there are formed an n-type semiconductor region ( 13 ) of gallium nitride, an active layer ( 14 ) of gallium indium nitride, and a p-type semiconductor region ( 15 ) of gallium nitride, in that order. An anode ( 17 ) is formed on the p-type semiconductor region ( 15 ), and a cathode ( 18 ) on the baseplate ( 11 ).