发明名称 |
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks |
摘要 |
A method for processing dual threshold nMOSFETs and pMOSFETs requiring only one additional masking and implantation operation over single threshold MOSFETs is disclosed. The additional mask and implant operation both enhances the threshold voltage doping of one type of FET and compensates the threshold voltage doping of another type of FET. Where a first threshold voltage implant sets the threshold voltage for an NMOS device to a low threshold voltage, and a second threshold voltage implant sets the threshold voltage for a PMOS device to a high threshold voltage, a third implant may both enhance a NMOS device threshold implant to set the threshold voltage high while compensating a PMOS device threshold implant to set the threshold voltage low. |
申请公布号 |
US6979609(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20030426221 |
申请日期 |
2003.04.30 |
申请人 |
INTEL CORPORATION |
发明人 |
POST IAN R.;MISTRY KAIZAD |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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