| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inductive coupling plasma processing device capable of effecting uniform plasma processing by high-density plasma, without generating any deterioration of plasma density with respect to a large-size substrate due to capacitive coupling constituent, and without generating any unevenness in the plasma density due to the bias of an electric field distribution. <P>SOLUTION: In the plasma processing device, wherein inductive coupling plasma is formed in a processing chamber 4 by supplying a high frequency power to a high frequency antenna 13 to process the substrate G through plasma processing, a high frequency antenna 13 is constituted so as to have a part 63, in which the existence density of antenna wires 46, 47, 48, 49, 50, 51, 52 becomes coarse and parts 61, 62 in which the same density becomes dense while the antenna wire will not exist at the central part 60 of the antenna 13. <P>COPYRIGHT: (C)2003,JPO |
