发明名称 |
Trim zener using double poly process |
摘要 |
In a zener zap diode device and a system for making such a device using a double poly process, p+ and n+regions are formed in a tub by means of p-doped and n-doped polysilicon regions, and a p-n junction is formed between the p+ region and an n-tub or between the n+ region and a p-tub. Cobalt or other refractory metal is reacted with silicon to form a silicide on at least the p-doped polysilicon region. By reverse biasing the p-n junction and establishing a sufficiently high zap current, the silicide can be forced to migrate across the junction to form a silicide bridge thereby selectively shorting out the p-n junction.
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申请公布号 |
US6979879(B1) |
申请公布日期 |
2005.12.27 |
申请号 |
US20040835698 |
申请日期 |
2004.04.30 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
YINDEEPOL WIPAWAN;STRACHAN ANDY |
分类号 |
H01L29/00;H01L29/866;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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