发明名称 |
Methods of forming semiconductor circuitry |
摘要 |
The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is formed in the uncovered portion and at least partially filled with a semiconductive material that comprises at least one atomic percent of an element other than silicon. The mask is removed and a first semiconductor circuit component is formed over the first portion of the substrate. Also, a second semiconductor circuit component is formed over the semiconductive material that at least partially fills the trench. The invention also includes semiconductor constructions.
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申请公布号 |
US6979631(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20040817175 |
申请日期 |
2004.03.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GONZALEZ FERNANDO;PING ER-XUAN |
分类号 |
H01L21/8242;H01L21/84;H01L27/12;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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