| 摘要 |
A solid-state image sensing device comprising a photoelectric converter portion, a solid-state image sensor, and a controlling means. The photoelectric converter portion has a plurality of photoelectric converters arranged in two dimensions on a semiconductor substrate. The solid-state image sensor vertically transfers charges, transferred from the photoelectric converter portion, at separate times of first transfer and second transfer. Further, the photoelectric converter portion has a vertical transfer portion, in which first and fourth gates are provided for odd-numbered photoelectric converters, and second and third gates are provided for even-numbered photoelectric converters, and a horizontal transfer portion for horizontally transferring charges transferred from the vertical transfer portion. The controlling means supplies the vertical transfer portion with vertical transfer pulses and the horizontal transfer portion with horizontal transfer pulses. The controlling means transfers charges from the photoelectric converter portion to the vertical transfer portion such that the charges of odd-numbered pixels and the charges of even-numbered pixels are each transferred in a lump, respectively.
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