发明名称 |
Etching multi-shaped openings in silicon |
摘要 |
Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.
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申请公布号 |
US6979652(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20020118763 |
申请日期 |
2002.04.08 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KHAN ANISUL;PAMARTHY SHARMA V;THEKDI SANJAY;KUMAR AJAY |
分类号 |
C23F1/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/302;H01L21/306 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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