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发明名称
METHOD FOR FORMING TRENCH TYPE ISOLATION LAYER IN SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100540482(B1)
申请公布日期
2005.12.26
申请号
KR20040054710
申请日期
2004.07.14
申请人
HYNIX SEMICONDUCTOR INC.
发明人
EUN, BYUNG SOO
分类号
H01L21/762
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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