发明名称 |
Making power semiconductor component, forms layered structure containing material of greater dielectric constant and recesses which are filled with semiconductor to form drift zone |
摘要 |
<p>To make the drift zone (34) and layers (32) penetrating it, A layer structure is first formed. This contains material (32) of greater dielectric constant and also recesses (33) on a substrate (30) or on layers provided on it (30). The drift zone is formed by filling (at least in part) the recesses (33) in the layer structure with semiconductor material. An independent claim is included for the corresponding power semiconductor component.</p> |
申请公布号 |
DE102004024344(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
DE20041024344 |
申请日期 |
2004.05.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PFIRSCH, FRANK |
分类号 |
H01L21/329;H01L21/336;H01L21/762;H01L29/06;H01L29/10;H01L29/78;H01L29/872;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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