| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation method suitable for forming shallow impurity implanted regions. SOLUTION: Ion beams include impurity ions to be implanted, and are accelerated with energy which is not higher than acceleration energy 5 keV. The ion beams are made incident to an inner cavity of the beam line, and the incident ion beams are made to converge with electrostatic lens arranged in the inner cavity. The converged ion beams are irradiated to a single-crystal semiconductor substrate, without interposing an amorphous layer having an element constituting the semiconductor substrate, and the ions are implanted into the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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