| 摘要 |
PROBLEM TO BE SOLVED: To prevent the semiconductor layer of a photodiode region from being damaged by a sidewall overetching process, thereby also preventing the generation of dark current. SOLUTION: The manufacturing method comprises a step for forming at least one gate electrode in a logic region through a gate oxide film, a step for forming a sidewall insulating film on both sides of the gate electrode, a step for forming a salicide preventive film on the entire gate electrode and insulating film, a step for removing the salicide preventive film formed in the logic region, a step for removing a certain region of the exposed sidewall insulating film by removing the salicide preventive film to expose the upper surface of at least one gate electrode and a step for forming a salicide film on the upper surface of the exposed gate electrode on the semiconductor layer where a field region and an active region are comparted, and the photodiode region and the logic region are comparted by the active region. COPYRIGHT: (C)2006,JPO&NCIPI
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