| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate-type semiconductor device which has a quick off-speed and carries out a good performance, and to provide a method of manufacturing the semiconductor device. SOLUTION: The insulated gate-type semiconductor device comprises an n<SP>-</SP>-type base region 11, a p<SP>+</SP>-type collector region 12, a p-type base region 13, and an n<SP>+</SP>-type emitter region 14, on the lower surface of the n<SP>-</SP>-type base region 11. There are formed an n<SP>+</SP>-type collector short region 15 extending to the n<SP>-</SP>-type base region 11 side rather than the p<SP>+</SP>collector region 12, and p<SP>+</SP>-type semiconductor region 16 at an interface between the n<SP>+</SP>-type collector short region 15 and the n<SP>-</SP>-type base region 11. COPYRIGHT: (C)2006,JPO&NCIPI
|
