| 摘要 |
PROBLEM TO BE SOLVED: To provide a WL-CSP type semiconductor device, in which the degree of freedom of laying rewiring is increased, without turning a rewiring layer to a double-layered structure, complicated external terminal arrangement and the increase in the external terminal density can be coped with, the jointing strength of a metal post and an external terminal is superior as well, and reliability is superior. SOLUTION: The semiconductor device 1 is the WL-CSP type semiconductor device, for which the metal post 30 whose periphery is sealed with resin is formed on the rewiring layer 27 connected to a pad electrode 15, and the external terminal 31 is joined to the surface of the metal post 30. The area of the external terminal side face 30b of the metal post 30 is larger than the area of a rewiring layer side face 30a. COPYRIGHT: (C)2006,JPO&NCIPI |
