| 发明名称 |
Atomic layer deposition for filling a gap between devices |
| 摘要 |
A method is provided for filling a trench or gap between a pair of semiconductor devices formed above a substrate. A liner is applied in a trench or gap between a pair of devices by atomic layer deposition to partially fill the trench or gap. The trench or gap is filled by a bulk fill process.
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| 申请公布号 |
US2005282350(A1) |
申请公布日期 |
2005.12.22 |
| 申请号 |
US20040873505 |
申请日期 |
2004.06.22 |
| 申请人 |
CHOU YOU-HUA;LIOU JOUNG-WEI;HSU KUANG-YUAN;LIN CHIH-LUNG;TSAI CHENG-YUAN |
发明人 |
CHOU YOU-HUA;LIOU JOUNG-WEI;HSU KUANG-YUAN;LIN CHIH-LUNG;TSAI CHENG-YUAN |
| 分类号 |
H01L21/314;H01L21/316;H01L21/76;H01L21/768;H01L21/8238;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/314 |
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