| 摘要 |
An integrated circuit ( 10 ) includes a semiconductor substrate ( 11 ) that has a top surface ( 32 ) for forming a dielectric region ( 14 ) with a trench ( 40 ) and one or more adjacent cavities ( 16 ). A conductive material such as copper is disposed within the trench to produce an inductor ( 50 ). A top surface ( 49 ) of the inductor is substantially coplanar with an interconnect surface ( 31 ) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization ( 57 ).
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