发明名称 |
Method and apparatus for processing a semiconductor substrate |
摘要 |
In a method of processing a semiconductor substrate, a source gas is primarily excited into a first plasma state having a first energy. The primarily excited source gas is provided to a process chamber. The excited source gas in the process chamber is secondarily excited into a second plasma state having a second energy higher than the first energy. The secondarily excited source gas contacts a semiconductor substrate to process the semiconductor substrate.
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申请公布号 |
US2005279282(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050155093 |
申请日期 |
2005.06.16 |
申请人 |
PARK KUN-SANG;PARK YOUNG-WOOK;HONG JIN-GI |
发明人 |
PARK KUN-SANG;PARK YOUNG-WOOK;HONG JIN-GI |
分类号 |
H01L21/318;C23C16/14;C23C16/34;C23C16/452;C23C16/509;C23F1/00;H01J37/32;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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