Vapor phase deposition of high melting point substances as layers on substrate, employs beam to heat target, and plasma beam to transport liberated vapor to substrate

摘要

A target (3) of the material to be deposited is heated, producing vapor. The vapor is entrained by a plasma beam, carried to the substrate and deposited there. The target is heated by a high energy plasma beam. The plasma beam is at right angles to the transport beam, and impinges on the target at a suitable angle. The high energy beam producing vapor, is a laser beam, an electron beam or an arc. Noble or other gases are used in the plasma beam. An independent claim is included for the apparatus used.