发明名称 SPUTTERING METHOD AND SPUTTERING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering method capable of detecting abnormality when even a slight change occurs in the sputtering condition. <P>SOLUTION: The sputtering method for sputtering a target with high frequency plasma of sputter gas in a vacuum chamber comprises (a) a step of conveying a substrate in the vacuum chamber and holding it, (b) a step of introducing sputter gas in the vacuum chamber, supplying the high frequency power to generate discharge, and sputtering a material of the target on the substrate, (c) a step of monitoring the high frequency electric characteristic in the vacuum chamber during the sputtering, (d) a step of stopping the supply of sputter gas and taking out the substrate outside the vacuum chamber, (e) a step of repeating the steps (a)-(d), and (f) a step of determining whether the discharge is normal or abnormal based on the overall mode of the high frequency electric characteristic monitored by the plurality of substrates. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005350683(A) 申请公布日期 2005.12.22
申请号 JP20040169584 申请日期 2004.06.08
申请人 FUJITSU LTD 发明人 FUJIKI MITSUSHI
分类号 H05H1/00;C23C14/34;H01L21/31;H01L21/316;H05H1/46 主分类号 H05H1/00
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