| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of restraining peeling from sharply spreading owing to the ductility of Cu at the time of polishing of the Cu. SOLUTION: The method comprises a low-k film formation process (S104) of forming a low-k film on a substrate using a dielectric insulating material, an SiO<SB>2</SB>film formation process (S108) for forming an SiO<SB>2</SB>film on the low-k film, an SiO<SB>2</SB>film polishing process (S110) of polishing the SiO<SB>2</SB>film; an opening part formation process (S112) of forming an opening part after the polishing process, a deposition process (S114 to S118) of depositing a conductive material on the opening part and the SiO<SB>2</SB>film, and a conductive material polishing process (S120 to S122) of polishing the conductive material. COPYRIGHT: (C)2006,JPO&NCIPI
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