| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor phase growth apparatus in which a substrate installing position with respect to a raw material gas feeding direction can be adjusted in simple configuration, and diffusion in the composition distribution of a film with consumption of raw material gases can be reduced. SOLUTION: A chemical vapor phase growth apparatus has a structure wherein a substrate 1 is installed on the outer periphery of a disk-shaped susceptor 2, and raw material gases flow from the center of the susceptor 2 to its outer periphery. The outer periphery of the susceptor 2 includes a plurality of recesses 4, a substrate install unit 5 comprised of a substrate install part 3 and a plurality of divided susceptor pieces 6 can be fitted into each of the recesses 4. Inside each of the recesses 4, positions of the plurality of susceptor pieces 6 and the substrate install part 3 are changed as a distance is changed from the center of the susceptor 2 to a position to install the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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