摘要 |
PROBLEM TO BE SOLVED: To provide a highly functional substrate with an active element, such as a transistor or the like, integrated thereinto. SOLUTION: The method for integrating an active element into a substrate comprises a step of forming on a substrate 10 a semiconductor layer 12 to serve as the base for an active element; a step of forming electrodes 14 on the surface of the semiconductor layer 12 formed on the substrate 10 to serve, respectively, as a source electrode and a drain electrode; a step of forming an insulating layer 16 of an insulating resin to cover the surface of the substrate 10 with the electrodes 14 formed thereon; a step of embossing the insulating film 16 by using a metal die for forming an insulating resin film 16a on the channel of the semiconductor layer 12; and a step of forming a gate electrode 18 on the insulating resin layer 16a. COPYRIGHT: (C)2006,JPO&NCIPI
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