发明名称 Semiconductor layer structure and method of making the same
摘要 A method of forming a circuit includes providing a first substrate; positioning an interconnect region on a surface of the first substrate; providing a second substrate; positioning a device structure on a surface of the second substrate, the device structure including a stack of at least three doped semiconductor material layers; and bonding the device structure to the interconnect region.
申请公布号 US2005282356(A1) 申请公布日期 2005.12.22
申请号 US20050092499 申请日期 2005.03.29
申请人 发明人 LEE SANG-YUN
分类号 H01L21/20;H01L21/30;H01L21/336;H01L21/46;H01L21/58;H01L23/48;H01L27/108;H01L27/148;(IPC1-7):H01L21/336 主分类号 H01L21/20
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