| 摘要 |
Provided is a semiconductor laser element depositing an insulating film on a p-type cladding layer in which it is possible to prevent bulk deterioration of the semiconductor laser element by suppressing thermal stress caused on a p-type cladding layer. A compound semiconductor multilayer structure is formed by depositing an n-type cladding layer, an active layer and a p-type cladding layer having a ridge part formed thereon sequentially in a deposition direction. Then, deposited in the deposition direction of the compound semiconductor structure is an insulating film formed of an insulating material which has a refractive index different from that of a material constituting the p-type cladding layer and a thermal expansion coefficient approximate to that of a material constituting the p-type cladding layer.
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