Plasma reactor for surface modification of objects

摘要

A plasma reactor is configured for rapid, simple and selective cleaning of plasma sources and adjacent areas of the processing chamber. The plasma reactor includes a processing chamber having a plurality of plasma zones, each associated with its own plasma source and/or a remote or downstream plasma source. The plasma reactor is configured so that substrates can be transported past the individual plasma sources in a processing mode in which the substrates are exposed to processing gasses chemically activated by the plasmas of the individual plasma sources. The plasma sources or zones can be selectively isolated or shielded from the substrates. Accordingly, an isolated plasma source can be selectively switched to a cleaning or etch mode without interrupting the processing flow of the substrates through the plasma reactor