| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a circuit having a nonvolatile storage function in CMOS-type process compatibility. <P>SOLUTION: A nonvolatile semiconductor memory circuit according to the present invention includes two MISFET-type transistors having same characteristics, and is characterized in that a conductive state of only the first transistor is controlled by controlling a voltage of a gate electrode of the first transistor to be a voltage other than a power supply potential and a ground potential for a predetermined period, thereby inducing a deterioration in an on-resistance thereof, which causes a performance difference between the first and second transistors, the performance difference being read as a current difference between the two transistors simultaneously made conductive, thereby storing and reading "0", and, conversely, a performance of the second transistor is degraded and no degradation is caused in the first transistor, thereby storing "1". <P>COPYRIGHT: (C)2006,JPO&NCIPI |
