| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can realize further low dielectric constant of an interlayer insulating film provided with embedded wiring, and to provide the semiconductor device. SOLUTION: An interlayer insulating film is formed on a substrate 1 with lamination structure that pinches an SiO<SB>2</SB>film 3 as a protection film between an organic film 2 and an SiOC-based film 4 as a low dielectric constant film. A first wiring groove 7 is formed as a groove pattern in the interlayer insulating film. Then, a Cu film is formed on the interlayer insulating film with a Ta film 8 in-between in a manner that the first wiring groove 7 is embedded, and they are polished by CMP method, thereby forming a first embedded wiring 9a wherein only the first wiring groove 7 is embedded by the Cu film with the Ta film 8 in between. COPYRIGHT: (C)2006,JPO&NCIPI
|
