| 摘要 |
PROBLEM TO BE SOLVED: To make current hard to leak in a contact part, even if structure is made minute. SOLUTION: The manufacturing method of a semiconductor device is provided with a process of forming an element isolation film 2 by the LOCOS method which separates the element region wherein a semiconductor element is formed on a silicon substrate 1, and for making the isolation film 2 thin, after that; a process of forming an electrically conductive film 7a, consisting of a material other than silicon on the silicon substrate 1 located on an element region or its surface adjacent to the isolation film 2; a process of forming an interlayer insulating film 8 on the electrically conductive film 7a and the isolation film 2; and a process for forming a contact hole 8a located on the electrically conductive film 7a in the interlayer insulating film 8. COPYRIGHT: (C)2006,JPO&NCIPI
|
