| 摘要 |
PROBLEM TO BE SOLVED: To obtain sufficient color reproducibility and to make existing manufacturing technology usable in a solid state imaging element of the structure that photoelectric conversion films are laminated. SOLUTION: The solid state imaging element 100 includes a photoelectric conversion film laminated on a semiconductor substrate, and a signal read circuit formed on the semiconductor substrate to read outside a signal according to signal charge accumulated in the photoelectric conversion film by the signal read circuit. The four photoelectric conversion films are laminated on the semiconductor substrate. A plurality of pixels 5 of the solid state imaging element 100 include four photoelectric conversion films, and four charge storage regions 1-4 arranged on the semiconductor substrate in which the signal charges stored in the four photoelectric conversion films are stored. The four charge storage regions 1-4 included in one pixel are adjacent to each other on the semiconductor substrate and arranged in a rectangular state. COPYRIGHT: (C)2006,JPO&NCIPI
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