| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal with a large diameter and high quality, including little micropipe defects, screw dislocation and edge dislocation, a silicon carbide substrate and a method for manufacturing the substrate. SOLUTION: Arranging a plurality of silicon carbide single crystals having their growth surfaces being tilted at an inclination angle of 1-90°from ä0001} plane so that the growth surfaces oppose each other with definite intervals, then silicon carbide single crystals are grown on the growth surface to fill the intervals with silicon carbide single crystals to obtain a grown crystal. Then a plurality of silicon carbide single crystals having their growth surfaces each being a surface with a normal line vector in a direction of a vector making an angle in the range of 45-135°with a vector projected of a normal line vector of the growth surface on the ä0001} plane are arranged so that their growth surfaces oppose each other with definite intervals, then silicon carbide single crystals are grown on the growth surface to obtain a grown crystal by filling the intervals with silicon carbide single crystals. COPYRIGHT: (C)2006,JPO&NCIPI
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