发明名称 MANUFACTURING METHOD OF MICRO-ELECTRO-MECHANICAL SYSTEM
摘要 PROBLEM TO BE SOLVED: To easily form a hollow area in silicon with good controllability, and to form the hollow area in a hydrogen ion injection area by performing thermal treatment to the hydrogen injection area after injecting hydrogen ion into an area forming the hollow area. SOLUTION: The manufacturing method of micro electric machine system comprises a step for forming a silicon-based film 12 on a base plate 11, a step for forming a hydrogen ion injection area 14 by injecting hydrogen ions into the area where the hollow area of the silicon-based film 12 is formed, a step for machining the silicon-based film 12 so as to make a part of the hydrogen ion injection area 14 expose, and a step for forming the hollow area 17 in the hydrogen ion injection area 14 by performing the thermal treatment. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005349533(A) 申请公布日期 2005.12.22
申请号 JP20040173437 申请日期 2004.06.11
申请人 SONY CORP 发明人 KASAI HIROTO
分类号 B81C1/00;(IPC1-7):B81C1/00 主分类号 B81C1/00
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