发明名称 Magnetoresistive element and magnetic memory
摘要 There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.
申请公布号 US2005280043(A1) 申请公布日期 2005.12.22
申请号 US20050213869 申请日期 2005.08.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KAI TADASHI;TAKAHASHI SHIGEKI;UEDA TOMOMASA;KISHI TATSUYA;SAITO YOSHIAKI
分类号 G01R33/09;G11B5/39;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L27/148 主分类号 G01R33/09
代理机构 代理人
主权项
地址