发明名称 Integrated circuit chip manufacturing method and semiconductor device
摘要 This invention moderates the difficulty in chip formation or packaging which accompanies thinning of a semiconductor region where an integrated circuit is formed. An integrated circuit chip manufacturing method includes a first bonding step of bonding a first support member to a first surface of a semiconductor substrate which has the first surface and a second surface and has a semiconductor region including an integrated circuit on a first surface side thereof, a thinning step of removing a second surface-side portion of the semiconductor substrate bonded to the first support member to leave the semiconductor region, thereby thinning the semiconductor substrate, a second bonding step of bonding a second support member to the second surface side of the thinned semiconductor substrate, and a chip forming step of forming chips by cutting the semiconductor region.
申请公布号 US2005280119(A1) 申请公布日期 2005.12.22
申请号 US20050149145 申请日期 2005.06.10
申请人 CANON KABUSHIKI KAISHA 发明人 MOMOI KAZUTAKA;SATO NOBUHIKO
分类号 H01L21/68;H01L21/762;H01L21/78;H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L21/68
代理机构 代理人
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