| 摘要 |
The method involves producing an active area (5) in the positions of semiconductor chips on an active top side (4) of the wafer, and applying contact surfaces (6) outside the active area. A sacrificial layer comprising insulating material is applied to the active area, leaving openings in the sacrificial layer at the edges of the active area. A conductive material is applied, the sacrificial layer removed, and a plastics layer applied before applying external contacts and separating the wafer into individual electronic devices. Independent claims are included for an electronic device; and a semiconductor wafer. |
