发明名称 |
SOLUTION RAW MATERIAL FOR ORGANIC METAL CHEMICAL VAPOR DEPOSITION AND COMPLEX OXIDE DIELECTRIC THIN FILM FORMED BY USING SUCH RAW MATERIAL |
摘要 |
<p>Disclosed is a solution raw material for organic metal chemical vapor deposition having high film-forming characteristics and excellent step coverage. Also disclosed is a complex oxide dielectric thin film formed by using such a raw material. Specifically, an improved solution raw material for organic metal chemical vapor deposition obtained by dissolving one or more organic metal compounds in an organic solvent is disclosed which is characterized in that the organic solvent is 1,3-dioxolane or a mixed solvent obtained by mixing a first solvent composed of 1,3-dioxolane and a second solvent composed of one or more solvents selected from the group consisting of alcohols, alkanes, esters, aromatic series, alkyl ethers and ketones.</p> |
申请公布号 |
WO2005121400(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
WO2005JP10665 |
申请日期 |
2005.06.10 |
申请人 |
MITSUBISHI MATERIALS CORPORATION;YANAGISAWA, AKIO;ITSUKI, ATSUSHI;SOYAMA, NOBUYUKI |
发明人 |
YANAGISAWA, AKIO;ITSUKI, ATSUSHI;SOYAMA, NOBUYUKI |
分类号 |
H01L21/316;C23C16/40;(IPC1-7):C23C16/40 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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