| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of executing complete patterning by preventing the remainder of polyimide due to deficient exposure at thick parts of a positive photosensitive polyimide film and occurrence of pattern disturbance due to over-exposure at thin parts in the patterning of the positive photosensitive polyimide film whose thickness is ununiform. <P>SOLUTION: Ultraviolet rays 9 are exposed once for a positive photosensitive polyimide precursor 8a at a part 1 onto which a pad electrode is formed by using a first mask, and the ultraviolet rays 9 are exposed twice for a positive photosensitive polyimide precursor 8b at a part 2 onto which a scribe line is formed by using the first mask and a second mask 10b, to prevent the remainder of polyimide by avoiding deficient exposure of the thick polyimide precursor 8b and to avoid the occurrence of pattern disturbance of the thin polyimide precursor 8a due to the over-exposure, thereby executing the complete patterning for the positive photosensitive polyimide film being a final protective film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
