| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride system heterojunction field effect transistor, in which the structure of a barrier is improved, the gate current is reduced, the mobility is improved, and the transistor performance is improved. SOLUTION: In a GaN system heterojunction field effect transistor, the barrier which is contact with heterojunction is formed as a multilayer structure which consists of a thin AlN layer and a GaN layer. In the structure of the field effect transistor, a heterojunction interface which consists of the GaN layer and the barrier is used as a channel, and the barrier which is contact with the channel is formed as the multilayer structure which consists of the thin AlN layer and the GaN layer. Thereby, gate leakage current is reduced, mobility is improved, and transistor performance is improved. COPYRIGHT: (C)2006,JPO&NCIPI
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